发明名称 Adding decoupling function for TAP cells
摘要 A circuit includes a tap cell. The tap cell includes a well region, a first well pickup region in the well region, a VDD power rail and a VSS power rail spaced apart from the VDD power rail. The tap cell also includes a first jog extending from the VDD power rail toward the VSS power rail and forming a continuous region with the VDD power rail. The tap cell further comprises a first capacitor including a first gate electrode line acting as a first capacitor plate, and the first well pickup region acting as a part of a second capacitor plate. A first one of the first and second capacitor plates is overlapped by and connected to the first jog, and a second one of the first and second capacitor plates is coupled to the VSS power rail.
申请公布号 US9406815(B2) 申请公布日期 2016.08.02
申请号 US201514797614 申请日期 2015.07.13
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Kuo-Ji;Tien Li-Chun
分类号 H01L29/34;H01L29/94;H01L23/528;H01L29/10;H01L27/08 主分类号 H01L29/34
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A circuit comprising: a tap cell comprising: a well region;a first well pickup region in the well region;a VDD power rail;a VSS power rail spaced apart from the VDD power rail;a first jog extending from the VDD power rail toward the VSS power rail, wherein the first jog forms a continuous region with the VDD power rail; anda first capacitor comprising a first gate electrode line acting as a first capacitor plate, and the first well pickup region acting as a part of a second capacitor plate, wherein a first one of the first and second capacitor plates is overlapped by and connected to the first jog, and a second one of the first and second capacitor plates is connected to the VSS power rail; anda second gate electrode line overlapping the first well pickup region, wherein the first and the second gate electrode lines are connected to different ones of the VDD and the VSS power rails.
地址 Hsin-Chu TW