Semiconductor devices with sharp gate edges and methods to fabricate same

摘要

This application discloses semiconductor devices with sharp gate edges including 2D and 3D memory cells, High Electron Mobility Transistors and tri-gate transistors. Implementation of a gate with sharp edges may improve the read and write speed and reduce the program and erase voltages in memory cells. It may also improve the gate control over the channel in tri-gate transistors and HEMTs. Methods to fabricate such devices are also disclosed.

主权项

1. A device having a Fin, wherein the said Fin is made of at least one non-insulating material, wherein the said Fin is on a material region, wherein the interface between the said Fin and the said material region is just one flat surface, said device has a gate which is not in physical contact with the said Fin, wherein at least two surfaces of the said gate intersect each other in a gate edge, wherein the said gate edge is in contact with a dielectric material in at least two points, wherein the said gate surfaces form an internal gate angle of less than 88 degrees.