RRAM cell structure with laterally offset BEVA/TEVA

摘要

The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell. The method forms a bottom electrode over a bottom electrode via. The method further forms a variable resistive dielectric layer over the bottom electrode, and a top electrode over the variable resistive dielectric layer. The method forms a top electrode via vertically extending outward from an upper surface of the top electrode at a position centered along a first axis that is laterally offset from a second axis centered upon the bottom electrode via. The top electrode via has a smaller width than the top electrode. Laterally offsetting the top electrode via from the bottom electrode via provides the top electrode via with good contact resistance.

主权项

1. A method of forming a resistive random access memory (RRAM) device, comprising:
forming a bottom electrode over a bottom electrode via; forming a variable resistive dielectric layer over the bottom electrode, wherein the variable resistive dielectric layer has an outermost sidewall that is aligned along a straight line with an outermost sidewall of the bottom electrode; forming a top electrode over the variable resistive dielectric layer; and forming a top electrode via vertically extending outward from an upper surface of the top electrode at a position centered along a first axis that is laterally offset from a second axis centered upon that the bottom electrode via, wherein the top electrode via has a smaller total width than the top electrode.