| 摘要 |
PROBLEM TO BE SOLVED: To provide a stacked multichip semiconductor device in which the loop height of a wire is suppressed and which is made thin by a method wherein the electrode pad of a semiconductor chip stacked in the upper part is connected to an internal electrode via an electrode pad in the lower part. SOLUTION: A first semiconductor chip 10 is fixed and bonded. A second semiconductor chip 11 is fixed and bonded onto the first semiconductor chip 10. A ball bump 17 is formed on a first bonding pad 12a. A second bonding pad 12b and the ball bump 17 are connected by a bonding wire 18 in such a way that a stitch bonding operation can be performed to the ball bump. In addition, the ball bump 17 and an internal electrode 14 are connected continuously by the bonding wire 18. The second bonding pad 12b and the internal electrode 14 are connected electrically via the first bonding pad 12a. |
