METHOD OF PRODUCING SOI WAFER BY HYDROGEN ION IMPLANTING SEPARATION METHOD AND SOI WAFER PRODUCED BY THE METHOD

摘要

A method of producing a high-quality SOI wafer by using a hydrogen ion implanting separation method, wherein a damaged layer remaining on the SOI layer surface after separation and a surface roughness are removed with an SOI layer film thickness kept uniform. A method of producing an SOI wafer by using a hydrogen ion implanting separation method, wherein an oxide film is formed, after a bonding heat treatment, on an SOI layer by a heat treatment under an oxidizing atmosphere, the oxide film is then removed and a heat treatment under a reducing atmosphere is applied; a method of producing an SOI wafer by using a hydrogen ion implanting separation method, wherein an oxide film is formed, after a separation heat treatment, on an SOI layer by a heat treatment under an oxidizing atmosphere, the oxide film is then removed and a heat treatment under a reducing atmosphere is applied; and an SOI wafer produced by the above methods.