| 摘要 |
PURPOSE:To prepare a hard type photomask by using, in combination, means of electron beam irradiation, ion injection, plasma etching, etc. on a polymer layer formed on a low reflection chromium layer provided on a glass substrate. CONSTITUTION:Resist 14 for electron beams is coated on a low reflection chromium layer consisting of chromium film 12 and chromium oxide film 13 formed on glass substrate 11, resist 14 is irradiated by electron beams 10 patternwise as it is kept at a constant high temperature, and resist 14 in the irradiated parts is evaporated to form exposed parts 15 of the chromium layer. Ions 20 of W, Mo, Sb, or the like are injected to the whole surface to form ion injected layer 16 on the low reflection chromium layer corresponding to parts 15, and after removing resist 14, the low reflection chromium layer is plasma-etched off to form a photomask. |
