Semiconductor non-volatile memory

摘要

In the disclosed FAMOS semiconductor non-volatile memory a source and a drain region of the p+ type are disposed in an n semiconductor layer to form a gate region between them. The main face of the semiconductor layer is coated with a silicon dioxide film in which a polycrystalline silicon gate is buried to bridge the source and drain regions. An n+ type high doped semiconductor region is disposed in the semiconductor layer only under the silicon gate to form a pn junction with the drain region. Thus the pn junction is normal to the main face of the semiconductor layer.