| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which is manufactured, by a method wherein firstly the deterioration of the characteristics of the element in the production process of the element is prevented from being generated, and secondly the production process is simplified to be able to maintain highly the yield of the manufacture of the element. SOLUTION: In a semiconductor light-emitting element of a structure, wherein the element has first and second conductivity type layers 3 and 5, a light- transmitting electrode 6 is formed on the surface of the layer 5, a pad electrode 7 is formed on the upper part of the film 6, a current stopping layer 29 is formed under the lower part of the electrode 7, and a protective film 19 is provided on the electrode 6. The layer 29 and the film 19 are used when one part of the layer 5 is removed, and by using the layer 29 and the film 19 as remaining etching masks flaws are prevented from being cut in the electrode 6 in the production process of the element and at the same time, a process of forming the film 19 for the electrode 6 and an insulative film for the layer 29 directly under the electrode 7, and a process of forming an insulative film for the etching masks are performed in the same process. |
