发明名称 |
Method of manufacturing a silicon monocrystal, and method of holding the same |
摘要 |
There is disclosed a method of manufacturing a silicon monocrystal in accordance with the Czochralski method in which a seed crystal is brought into contact with silicon melt and is then slowly pulled while being rotated in order to grow a silicon monocrystalline ingot below the seed crystal. In the method, there is used a seed crystal whose a tip end to be brought into contact with the silicon melt has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the thickness of the tip portion increases to a desired value. Subsequently, the seed crystal is pulled slowly in order to grow a silicon monocrystalline ingot having a desired diameter without performance of a necking operation. During the growth of the silicon monocrystalline ingot, a part of the crystal is mechanically held. The method completely prevents falling of a monocrystalline ingot being grown which would otherwise occur due to the increased diameter and weight of the ingot.
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申请公布号 |
US6056818(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19980096093 |
申请日期 |
1998.06.11 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
IINO, EIICHI |
分类号 |
C30B15/00;C30B15/30;C30B15/32;C30B15/36;C30B29/06;H01L21/208;(IPC1-7):C30B15/32 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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