| 摘要 |
PURPOSE:To increase picture elements for higher integration while reducing the processing precision in case of forming horizontal transfer electrode and facilitating the device formation by a method wherein unit elements of horizontal shifting registors are composed in every multiple rows or vertical shifting registers. CONSTITUTION:Vertical shifting registers 1, 2 including multiple channels insulated and arrayed by channel stop regions 71, 72 are provided. then the first - the third horizontal shifting registers 11-13 including potential barrier regions 44, 45...50, 51...56, 57 provided corresponding to respective regions 71, 72... arranged perpendicular to the signal charge transfer direction of these vertical shifting registers as well as the horizontal transfer electrodes 31a, 31b, 32a, 32b... provided above the potential barrier regions 44, 45... are provided. Besides, No.i and No.(i+1) transfer gate electrodes 22-24 arranged in parallel with the change transfer direction on the horizontal shifting registers 11-13 adjoining the vertical shifting registers 1, 2, 3... as well as electrode transfer channel coupling the adjoining No.j and No.(j+1) horizontal shifting registers with each other are provided below each transfer gate electrode at every three each of horizontal transfer electrodes. |
