SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THEREOF

摘要

A method for reducing the space between the conducting material for plate electrode and moving channel of charge comprises; forming a capacitor dielectric layer, conducting material for plate electrode and insulating layer on the charge storage electrode; removing the above layer to remain the fixed region by mask processing; forming a spacer of insulator on silicon wafer, followed by forming a gate oxide layer; forming a gate electrode on the gate oxide layer by mask processing. The spacer is composed of oxide film or nitride film.