| 摘要 |
A semiconductor device includes a layer on a substrate in which a two-dimensional electron gas is produced, source and drain electrodes disposed opposite each other on the substrate, and a gate electrode including a plurality of lower gate electrodes and an upper gate electrode. The lower gate electrodes are spaced at prescribed intervals in a direction perpendicular to a direction connecting the source and drain electrodes and connected to the layer only at their bottom surfaces. The upper gate electrode is disposed on the lower gate electrodes and electrically connects the lower gate electrodes to each other. When a bias voltage is applied to the gate electrode, a depletion layer spreads below the lower gate electrodes and the two-dimensional electron gas is concentrated beneath regions where the lower gate electrodes are absent, producing a quasi one-dimensional electron gas. Therefore, a semiconductor device utilizing the quasi one-dimensional electron gas as a channel current, in which parasitic capacitance is not increased, is achieved.
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