发明名称 |
Method for forming resist patterns |
摘要 |
Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.
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申请公布号 |
US5580702(A) |
申请公布日期 |
1996.12.03 |
申请号 |
US19940357179 |
申请日期 |
1994.12.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HAYASE, RUMIKO;ONISHI, YASUNOBU;NIKI, HIROKAZU;OYASATO, NOAHIKO;KOBAYASHI, YOSHIHITO;NAYASE, SHUZI |
分类号 |
G03F7/023;G03F7/039;(IPC1-7):G03F7/30 |
主分类号 |
G03F7/023 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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