| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form fine patterns having good shapes with high dimensional accuracy and good reproducibility by first baking a chemical amplification type resist at its phase transition temp. or above after exposure, then baking this resist at the phase transition temp. or below after the next exposure. SOLUTION: The photoresist film 12 of the chemical amplification type is formed on a semiconductor substrate 11 and is irradiated with UV rays through a mask plotted with desired semiconductor integrated circuit patterns. The resist film is then subjected to development by using an alkaline developer after the post-exposure baking. The post-exposure baking is divided to two stages; the first baking is executed for 5 to 15 seconds at the phase transition temp. of the resist film 12 or above and the second baking at the phase transition temp. of the resist film or below. The diffusion length of acids increases in the first baking and, therefore, the distribution of the generated acid quantity in the film thickness direction by standing waves is made uniform. Since the baking is short in time, the softening of the resist to the extent of degrading the resolution does not arise. The chemical amplification reaction is completely progressed by the second baking to be executed for about 60 to 120 seconds at the phase transition temp. of the resist or below. |
