| 摘要 |
PROBLEM TO BE SOLVED: To accurately obtain a fringe capacitance and overlap capacitance, by finding and separating both capacitances from measured values. SOLUTION: A method comprises steps of applying a gate voltage Vg to a gate electrode 103 of an MOSFET 101 with a DC current 106 fed to the electrode 103, connecting a DC current 108 to the drain electrode 104 through a DC ammeter 107 for measuring the drain current Id, applying a drain voltage Vd to measure an Id-Vg characteristic of each gate length L, finding a threshold voltage Vt and mutual inductance gm from the Id-Vg characteristic to compute a transistor gain factorβ, measuring a gate capacitance Cg every length L to make a Cg-L characteristic curve, obtaining a fringe capacitance from the intersect of the Cg axis at L=0 on the Cg-L curve, and subtracting the fringe capacitance from the intersect of the Cg axis atβ=0 on a Cg-βcurve to find an overlap capacitance.
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