SIMULATION METHOD OF LITHOGRAPHY PROCESS

摘要

PURPOSE: A simulation method for a lithography process is provided to predict a size of a resist pattern by applying a diffused aerial image model(DAIM) to a threshold model. CONSTITUTION: A condition of an exposure equipment and a mask layout in a resist process are inputted to obtain an aerial image. The aerial image is treated identical to a distribution of acid generated from the resist in the exposure process. Then, a diffused aerial image is obtained by considering the diffusion of acid in a post expose bake process. A threshold model is applied to the diffused aerial image so as to predict the size of a pattern. The thickness of the resist is formed less than 15000Å in order to identically treat the aerial image to the distribution of acid.