发明名称 |
Retardation layer for preventing diffusion of metal layer and fabrication method thereof |
摘要 |
A retardation layer of a copper damascene process and the fabrication method thereof, to replace the conventional barrier layer with a laminated layer. The laminated layer combines the conventional barrier layer with a porous layer, wherein the porous layer can be formed either above or below the barrier layer to improve the retardation of the copper atom diffusion. Preferably, the porous layer is formed above the barrier layer.
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申请公布号 |
US6156655(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19990408612 |
申请日期 |
1999.09.30 |
申请人 |
UNITED MICROELECTRONICS CORP.;UNITED SEMICONDUCTOR CORP. |
发明人 |
HUANG, MING-CHING;CHEN, CHIH-RONG;HO, KUAI-JUNG;HUANG, WEN-YUAN;YEH, CHI-CHIN |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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