发明名称 Retardation layer for preventing diffusion of metal layer and fabrication method thereof
摘要 A retardation layer of a copper damascene process and the fabrication method thereof, to replace the conventional barrier layer with a laminated layer. The laminated layer combines the conventional barrier layer with a porous layer, wherein the porous layer can be formed either above or below the barrier layer to improve the retardation of the copper atom diffusion. Preferably, the porous layer is formed above the barrier layer.
申请公布号 US6156655(A) 申请公布日期 2000.12.05
申请号 US19990408612 申请日期 1999.09.30
申请人 UNITED MICROELECTRONICS CORP.;UNITED SEMICONDUCTOR CORP. 发明人 HUANG, MING-CHING;CHEN, CHIH-RONG;HO, KUAI-JUNG;HUANG, WEN-YUAN;YEH, CHI-CHIN
分类号 H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 主分类号 H01L21/768
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