Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer

摘要

A method of producing high-quality epitaxial wafers with scarce occurrence of epitaxial layer defects by allowing an epitaxial layer on wafers sliced from a nitrogen-doped silicon single crystal as well as a method of pulling up a silicon single crystal to serve as the raw material therefore is provided. More particularly, a method of pulling up a single crystal from a nitrogen-doped silicon material melt while allowing the single crystal to grow is provided which comprises employing a passing or residence time in the temperature range of 1150-1050° C. of not less than 50 minutes and/or a passing or residence time in the temperature range of 1050-950° C. of not more than 40 minutes in the step of pulling up of the single crystal. Further, a method of manufacturing epitaxial wafers is provided which comprises allowing an epitaxial layer on the surface of silicon wafers sliced from the single crystal pulled up by the method mentioned above.