发明名称 |
Programming of nonvolatile memory cells |
摘要 |
A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifying a programmed of a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and maintaining the gate voltage at a constant level during at least a part of the step of increasing. The steeps of applying, verifying, increasing and maintaining are repeated until the cell reaches the programmed state.
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申请公布号 |
US6396741(B1) |
申请公布日期 |
2002.05.28 |
申请号 |
US20000563923 |
申请日期 |
2000.05.04 |
申请人 |
SAIFUN SEMICONDUCTORS LTD.;TOWER SEMICONDUCTORS LTD. |
发明人 |
BLOOM ILAN;EITAN BOAZ;COHEN ZEEV;FINZI DAVID;MAAYAN EDUARDO |
分类号 |
G11C16/02;G11C11/56;G11C16/04;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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