发明名称 METHOD FOR CLEANING WAFER
摘要 PROBLEM TO BE SOLVED: To reduce particles on a wafer surface surely in a shot time. SOLUTION: A method for cleaning a wafer for cleaning the surface of a semiconductor wafer after finish polishing, comprises a first ozone water cleaning process or forming an oxide film comprising a plurality of layers by ozone water cleaning, a mechanical cleaning process for brush cleaning the wafer surface after the first ozone water cleaning process, a hydrofluoric acid solution cleaning process or exfoliating so that only one layer of a wafer surface side is left by cleaning the oxide film formed on the wafer surface with hydrofluoric acid solution, and a second ozone water cleaning process for further forming the oxide film by the ozone water cleaning to the wafer surface after finishing the hydrofluoric acid solution cleaning.
申请公布号 JP2002203824(A) 申请公布日期 2002.07.19
申请号 JP20000401069 申请日期 2000.12.28
申请人 SUPER SILICON KENKYUSHO:KK 发明人 KAWAZOE KIMIYUKI;YAMASHITA JUNICHI;MATSUZAKI JUNICHI;HAYASHI TATEO
分类号 H01L21/308;H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/308
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