发明名称 |
METHOD FOR CLEANING WAFER |
摘要 |
PROBLEM TO BE SOLVED: To reduce particles on a wafer surface surely in a shot time. SOLUTION: A method for cleaning a wafer for cleaning the surface of a semiconductor wafer after finish polishing, comprises a first ozone water cleaning process or forming an oxide film comprising a plurality of layers by ozone water cleaning, a mechanical cleaning process for brush cleaning the wafer surface after the first ozone water cleaning process, a hydrofluoric acid solution cleaning process or exfoliating so that only one layer of a wafer surface side is left by cleaning the oxide film formed on the wafer surface with hydrofluoric acid solution, and a second ozone water cleaning process for further forming the oxide film by the ozone water cleaning to the wafer surface after finishing the hydrofluoric acid solution cleaning.
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申请公布号 |
JP2002203824(A) |
申请公布日期 |
2002.07.19 |
申请号 |
JP20000401069 |
申请日期 |
2000.12.28 |
申请人 |
SUPER SILICON KENKYUSHO:KK |
发明人 |
KAWAZOE KIMIYUKI;YAMASHITA JUNICHI;MATSUZAKI JUNICHI;HAYASHI TATEO |
分类号 |
H01L21/308;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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