发明名称 METHOD AND APPARATUS FOR MEMORY CONTROL CIRCUIT
摘要 <p>A method and circuit for fast memory access (read or write) of the data to and from a memory array is disclosed. Architecture wise, the memory array control circuit (5) provides for at least two address latches and two page registers. The first address latch (16) contains a first data address and the second address latch (18) contains a second data address. The first data address is decoded first and sent to the memory array (10) to access (read or write) the corresponding data from the memory array (10). When the data of the first data address is being accessed, the decoding process will begin for a second data address. When the data of the first data address has been accessed, the second data address is ready for the memory array. Thus, there can be continuous fetching from or writing to the memory array (10). In the preferred embodiment, there are two page registers (38, 40). In a read operation, the data read from the first data address is transferred to a first page register (38). When the data of the second data address is being accessed, the data in the first page register (38) is transferred to a second page register (40). When the operation to read the data from the second data address is completed, the data can be placed in the first register (38). The data in the second page register can be rapidly transferred to a latch and on to a bus. In this manner, there is always space made available for the data read. Similarly, in a write operation, data is transferred from the data bus to the second page register and then to the first page register. The data in the first register is written into the memory array.</p>
申请公布号 WO2000030116(A1) 申请公布日期 2000.05.25
申请号 US1999027156 申请日期 1999.11.16
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