| 摘要 |
A surface-emitting semiconductor laser having a light-emitting region and a non-light-emitting region, the light-emitting region emitting light in a direction perpendicular to a semiconductor substrate. The light-emitting region includes a resonator formed on the semiconductor substrate. The non-light-emitting region includes a contact region electrically connected to the resonator. The contact region is formed in a layer which is part of a layer including at least part of the resonator but is apart from the part of the resonator, and the contact region has a higher carrier density than the layer in which the contact region is formed.
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