| 摘要 |
Power semiconductor module comprises a housing, contacting elements, a semiconductor component and a ceramic substrate (1) with a metal coating partially covering the first (4) and the second (7) surface of the ceramic. The distance of the metallization edge (2) of the first metallic coating lying at high potential to the edge (8) of the ceramic is less than the distance of the metallization edge (6) of the second metallic coating to the edge of the ceramic. Preferred Features: The ceramic substrate is made from aluminum oxide, aluminum nitrite, beryllium oxide or silicon nitrite. The metallic coating is made from copper, aluminum or silver and is applied by direct copper bonding or active metal brazing. |
