| 发明名称 |
Method for the sulphidation treatment of 111-V compound semiconductor surfaces |
| 摘要 |
<p>Method for deoxidizing and passivating, by sulfidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulfide ions with a concentration of between about 10-1M and 10-7M.</p> |
| 申请公布号 |
GB2380320(B) |
申请公布日期 |
2005.06.22 |
| 申请号 |
GB20020012300 |
申请日期 |
2002.05.28 |
| 申请人 |
* SAGEM SA;* CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE |
发明人 |
DOMINIQUE * LORANS;BRUNO * CANAVA;ARNAUD * ETCHEBERRY;MICHEL * HERLEM;JACKY * VIGNERON |
| 分类号 |
H01L21/306;H01L31/18;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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