发明名称 |
Method of manufacturing group-III nitride crystal |
摘要 |
There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
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申请公布号 |
US7288151(B2) |
申请公布日期 |
2007.10.30 |
申请号 |
US20040999338 |
申请日期 |
2004.11.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI TAKATOMO;MORI YUSUKE;YOSHIMURA MASASHI;KAWAMURA FUMIO;HIROTA RYU |
分类号 |
C30B11/14;C30B29/38;C30B11/00;C30B11/12;C30B19/02;C30B29/40;H01L21/208 |
主分类号 |
C30B11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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