IMAGE SENSOR, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an image sensor whose dark current is reduced, and also to provide a manufacturing method thereof. SOLUTION: The image sensor includes a pixel region and logic regions. Pixel element isolation films of the above-mentioned pixel region include side walls with slope angles smaller than those of side walls of logic element isolation films of the above-mentioned logic regions. A dopant layer can be provided adjacently to at least some side walls of the above-mentioned pixel element isolation films, and the dopant layer is not provided to at least some side walls of the above-mentioned logic isolation films. The dopant layer and/or logic element isolation film side walls having smaller slope angles are provided to NMOS devices in the above-mentioned logic regions while they are not provided to PMOS devices in the above-mentioned logic regions. A doped sacrificial film can be used for manufacturing the above-mentioned dopant. COPYRIGHT: (C)2008,JPO&INPIT