| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for which the size of an impedance in the connection of two lines of wiring whose impedances are different can be changed after the manufacture. SOLUTION: The semiconductor device comprises two diffusion layers provided to a prescribed depth from the surface of a substrate to be the input terminal and output terminal of a signal line, a channel provided between the two diffusion layers where the signal line by a channel is generated, and a gate electrode provided along the channel through an oxide film for generating the signal line at the channel when different voltages are applied on the input terminal side and the output terminal side of both ends. COPYRIGHT: (C)2008,JPO&INPIT
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