| 摘要 |
PROBLEM TO BE SOLVED: To fine a memory cell by restraining IPD leak. SOLUTION: The nonvolatile semiconductor memory has a semiconductor substrate 11, a first insulating layer 13 on the semiconductor substrate 11, a floating gate electrode FG on the first insulating layer 13, a second insulating layer 15 on the floating gate electrode FG, and a control gate electrode CG on the second insulating layer 15. The floating gate electrode FG is constituted of a first metallic layer 14a in contact with the first insulating layer 13, a second metallic layer 14b in contact with the second insulating layer 15, and a semiconductor layer 14c between the first and second metallic layers 14a, 14b. COPYRIGHT: (C)2008,JPO&INPIT
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