| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which inhibits the increase of the characteristic variation of a transistor with a fining. SOLUTION: In a memory cell MC, the channel width Wac of an access transistor is made larger than that Wdr of a driver transistor in the relationship of the channel widths Wdr and Wac of the access transistor NQ3 and the driver transistor NQ1. That is, since a channel area is made larger than the driver transistor NQ1 designed by a minimal design size in the access transistor NQ3, the area of LW is increased, and the increase is suppressed in the characteristic variation of the access transistor NQ3. COPYRIGHT: (C)2008,JPO&INPIT
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