发明名称 Intermediate layout for resolution enhancement in semiconductor fabrication
摘要 Intermediate resolution-enhancement state layouts are generated based upon an original non-resolution enhanced layout of an integrated circuit and an associated resolution-enhanced layout. The intermediate resolution-enhancement state layout includes fragments corresponding to parts of the original layout and biases associated with the fragments, where the biases indicate distances between the fragments and the resolution-enhanced layout. The fragments are also assigned attributes such as fragment type, fragment location, and biases. The intermediate resolution-enhancement state layouts can be combined to generate the layout for a full chip IC. Two or more intermediate resolution-enhancement state layouts are assembled and are locally reconverged to adjust the resolution enhancement associated with the intermediate resolution-enhancement state layouts and obtain the intermediate resolution-enhancement state layouts for the full IC.
申请公布号 US7404173(B2) 申请公布日期 2008.07.22
申请号 US20050074882 申请日期 2005.03.07
申请人 APRIO TECHNOLOGIES, INC. 发明人 WU SHAO-PO;WANG XIN;TANG HONGBO;HUNG MEG
分类号 G06F17/50;G03F1/00;G03F1/36;G03F9/00 主分类号 G06F17/50
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