SEMICONDUCTOR DEVICE HAVING CONTACT PLUG AND FABRICATION METHOD THEREOF

摘要

A semiconductor device having a contact plug and fabrication method thereof are provided to reduce the contact resistance between a contact plug and a support layer by reducing the inflow of oxygen into a support layer at the bottom of the contact hole. An insulating layer(103) comprises a contact hole(105) formed on a support layer(101), and a first contact plug(CP1) is formed in the inner wall and the bottom of the contact hole. A second contact plug is formed on the first contact plug, and the conductive layer is connected to the first contact plug and the second contact plug(110a). The first contact plug is made of an internal plug(109a) formed on the inner wall of the contact hole and the bottom plug(107a) formed at the bottom of the first contact plug.