MEMORY DEVICE

摘要

A memory device may include: first to Nth cell blocks; first to (N−1)th bit line sense amplifiers, of which a Kth bit line sense amplifier amplifies a potential difference between a bit line of a Kth cell block and a bit line of a (K+1)th cell block; one or more first outermost bit line sense amplifiers suitable for amplifying a potential difference between a first node and a bit line of the first cell block, wherein drivability for driving the first node is different from drivability for driving the bit line of the first cell block; and one or more second outermost bit line sense amplifiers suitable for amplifying a potential difference between a second node and a bit line of the Nth cell block, wherein drivability for driving the second node is different from drivability for driving the bit line of the Nth cell block.

主权项

1. A memory device comprising:
first to Nth cell blocks where N is a natural number greater than 2; first to (N−1)th bit line sense amplifiers, of which a Kth bit line sense amplifier amplifies a potential difference between a bit line of a Kth cell block and a bit line of a (K+1)th cell block, where K is a natural number from 1 to N−1; one or more first outermost bit line sense amplifiers suitable for amplifying a potential difference between a first node and a bit line of the first cell block, wherein a drivability for driving the first node is different from a drivability for driving the bit line of the first cell block; and one or more second outermost bit line sense amplifiers suitable for amplifying a potential difference between a second node and a bit line of the Nth cell block, wherein a drivability for driving the second node is different from a drivability for driving the bit line of the Nth cell block.