发明名称 MEMORY DEVICE FOR CONTROLLING REFRESH OPERATION BY USING CELL CHARACTERISTIC FLAGS
摘要 A memory device includes a memory cell array that includes a plurality of memory cell rows; and a refresh address generator configured to store flags respectively corresponding to the plurality of memory cell rows, generate refresh row addresses respectively corresponding to the plurality of memory cell rows by performing a count operation, and according to the flags, change a refresh period of the plurality of memory cell rows.
申请公布号 US2016163373(A1) 申请公布日期 2016.06.09
申请号 US201514956792 申请日期 2015.12.02
申请人 HYUN Ki-ho;SOHN Kyo-min;RYU Je-min;SEOL Ho-Seok 发明人 HYUN Ki-ho;SOHN Kyo-min;RYU Je-min;SEOL Ho-Seok
分类号 G11C11/406;G11C11/4093;G11C11/408 主分类号 G11C11/406
代理机构 代理人
主权项 1. A memory device comprising: a memory cell array that includes a plurality of memory cell rows; and a refresh address generator configured to store flags respectively corresponding to the plurality of memory cell rows,generate refresh row addresses respectively corresponding to the plurality of memory cell rows by performing a count operation, andaccording to the flags, change a refresh period of the plurality of memory cell rows.
地址 Hwaseong-si KR