| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a driving semiconductor device relatively easily by a method wherein, when the space between a drain diffused layer and a well diffused layer is supplied with a current in the sequential direction, the semiconductor substrate is electrically disconnected by a semiconductor switching element. SOLUTION: An EL display panel 1 is formed of electrically insulated scanning line electrode 9 and data line electrode 8. The point of intersection of the two elecctrodes 9, 8 is to be a picture element. A large capacity is parasitized on respective picture elements of the EL panel 1 and a plasma display. An output CMOS array high potential side power supply terminal 69 and an output CMOS low potential side power supply terminal 70 as the high voltage base power supply source terminals are externally power supplied. In such a constitution, the output CMOS array high potential side power supply terminal 69 is periodically power-supplied between 70 V and grounding potential 0 V by a switching element 3S. Besides, the output CMOS array low potential side power supply terminal 70 is controlled at the grounding potential 12 or in the disconnected state by another switching element 71. |
