Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM)

摘要

Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method of managing memory includes determining a temperature associated with the memory and determining a level of write queue utilization associated with the memory. A write operation may be performed based on the level of write queue utilization and the temperature.

主权项

1. An apparatus comprising:
a memory storing data and program code; a temperature sensor configured to determine a temperature associated with the memory; and a controller in communication with the memory and the temperature sensor, the controller configured to:
receive the temperature;execute the program code to determine a level of write queue utilization associated with the memory; andperform a write operation based on the temperature and based on whether the level of write queue utilization has reached a high water mark indicator, wherein the high water mark indicator is incremented in response to receiving a first write request and decremented in response to writing a second write request to the memory.