Transistor with charge enhanced field plate structure and method

摘要

Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at least a portion of a gate electrode (102). The field plate (108) and charged dielectric layer (106) provide the ability to modulate the electric field or capacitance in the transistor. For example, the charged dielectric layer (106) provides the ability to control the capacitance between the gate electrode (102) and field plate (108). Modulating such capacitances or the electric field in transistors can facilitate improved performance. For example, controlling gate electrode (102) to field plate (108) capacitance can be used to improve device linearity and/or breakdown voltage. Such control over gate electrode (102) to field plate (108) capacitance or electric fields provides for high speed and/or high voltage transistor operation.

主权项

1. A transistor device, comprising:
a substrate; a passivation surface layer covering the substrate with a gate electrode opening formed therein; a conductive gate electrode located in the gate electrode opening to be in contact with the substrate; a first dielectric layer over the conductive gate electrode; a charged dielectric layer over at least a portion of the first dielectric layer and overlapping at least a portion of the conductive gate electrode, the charged dielectric layer including open bonds to provide a fixed charge density in the charged dielectric layer; a field plate overlapping at least a portion of the charged dielectric layer; and a circuit, the circuit coupled to the field plate, the circuit configured to drive the field plate to cause the field plate to inject charge into the charged dielectric layer until the charged dielectric layer has sheet charge density of at least 5E1013 cm−2.