发明名称 |
Nonvolatile memory device and programming method thereof |
摘要 |
A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells. |
申请公布号 |
US9424932(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201414567639 |
申请日期 |
2014.12.11 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Choi Yoon-Hee;Nam Sang-Wan;Lee Kang-Bin |
分类号 |
G11C11/34;G11C16/10;G11C16/04;G11C16/34;G11C7/04;H01L27/115 |
主分类号 |
G11C11/34 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method of programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line, the programming method comprising:
setting the common source line to a predetermined voltage; floating the common source line after setting the common source line to the predetermined voltage; performing a program operation on memory cells connected to a selected wordline after floating the common source line; and performing a verify operation on the memory cells to determine whether the program operation was successful. |
地址 |
Suwon-si, Gyeonggi-do KR |