发明名称 Nonvolatile memory device and programming method thereof
摘要 A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells.
申请公布号 US9424932(B2) 申请公布日期 2016.08.23
申请号 US201414567639 申请日期 2014.12.11
申请人 Samsung Electronics Co., Ltd. 发明人 Choi Yoon-Hee;Nam Sang-Wan;Lee Kang-Bin
分类号 G11C11/34;G11C16/10;G11C16/04;G11C16/34;G11C7/04;H01L27/115 主分类号 G11C11/34
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A method of programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line, the programming method comprising: setting the common source line to a predetermined voltage; floating the common source line after setting the common source line to the predetermined voltage; performing a program operation on memory cells connected to a selected wordline after floating the common source line; and performing a verify operation on the memory cells to determine whether the program operation was successful.
地址 Suwon-si, Gyeonggi-do KR
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