| 摘要 |
We disclose a power semiconductor device for high current density applications, the device comprising: a plurality of semiconductor regions formed on top of one another and a contact layer formed above a first surface of one of the semiconductor regions. The contact layer comprises a first portion placed in direct contact of said first surface of said one of the semiconductor regions and a second portion formed over an insulation region formed in direct contact of said first surface of said one of the semiconductor regions. The device further comprises a first metal layer (230) formed at least partly on the second portion of the contact layer; and a second metal layer (235) formed at least partly on the first metal layer. The first and second metal layers are formed in such a way that the first portion of the contact layer and at least a part of the second portion of the contact layer are not pressurised during a packaging process of the power semiconductor device. |
