METHOD OF DEPOSITING CHARGE TRAPPING POLYCRYSTALLINE SILICON FILMS ON SILICON SUBSTRATES WITH CONTROLLABLE FILM STRESS

摘要

A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or oxynitride layer, a polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer. The multilayer structure is prepared in a manner that reduces wafer bow.