| 摘要 |
PURPOSE:To obtain low resistance ohmic contact at a semiconductor device by diffusing Zn at predetermined temperature and in phosphorus pressure atmosphere at Ga, As and P substrate containing much phosphorus content and then retaining the substrate at 100-300 deg.C with aluminum provided. CONSTITUTION:Zn is diffused at Ga, As1-X, PX substrate, where X is limited to 0.6<=X<=1.0, in a sealed tube under the condition that phosphorus pressure P is 1X10<-1>Torr<=P<=2X10<3>Torr and the diffusing temperature Tj is 650 deg.C<=Tj <=800 deg.C. Then, the substrate is heated at 100-300 deg.C, and vacuum deposited with aluminum in such heated state. The substrate is finally heat treated at 450-600 deg.C for approx. 60min. According to this method, the substrate does not sacrifice the fundamental characteristics of the semiconductor device but can obtain extremely stable low resistance ohimc contact in mass production. |
