| 摘要 |
PURPOSE:To realize good crystal growth showing excellent characteristic in flatness by utilizing the saphire R surface as a growing substrate. CONSTITUTION:The epitaxial growth is realized on the saphire R surface by the MOVPE method using the III group organic metal such as trimethylgallium (TMG), triethylgallium (TEG), trimethylaluminum (TMA) or triethylaluminum (TEA) and NH3 as the raw materials. As the III group raw material, the III group organic metal is used and the saphire R surface is used as the growing substrate. Thereby, the growth film having the equivalent characteristic as the saphire C surface can be formed by the MOVPE method as the non-thermal equilibrium growth having small dependency on substrate orientation and the growth film having flat surface mode can be obtained.
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