| 摘要 |
PURPOSE:To provide a GaP pure green light-emitting device substrate capable of manufacturing a high luminance GaP light-emitting device emitting light in a green color. CONSTITUTION:In a GaP pure green light-emitting device substrate, in which an N-type GaP layer 12 and P-type GaP layer 14 are formed onto a GaP single crystal substrate 10 by at least one layer respectively, an intermediate GaP layer 13, in which donor concentration ND is less than 1X10<16> number/cm<3> and donor concentration ND and acceptor concentration NA are made approximately the same, is formed to a P-N junction section between the N-type GaP layer 12 and the P-type GaP layer 14. The thickness of the intermediate GaP layer 13 is kept within a range of 3-5mum. |
