| 摘要 |
<p>PURPOSE:To keep high speed operation and low power consumption, to simplify potential control of a word line, and to surely prevent inversion malfunction of spontaneous polarization at the time of standby. CONSTITUTION:This device is provided with a plate line potential supplying circuit 2 which normally supplies a potential Vp of an intermediate level between a high level and a low level of a logical level of binary information to a plate line PL, and a substrate potential supplying circuit 3 supplying a potential Vs in which a difference between a potential Vp of the plate line and the Vs is smaller than the withstand voltage of a ferroelectric film of a capacity element C of a memory cell MC and a difference between a low power supply potential of a single power supply and the Vs is smaller than turn-on voltage of a diode of pn junction between a source and a drain of the transistor T of a memory cell and a substrate, to a substrate of a transistor T.</p> |
