| 摘要 |
A fabrication method of a semiconductor device in which a refractory metal silicide film with a low sheet-resistance can be produced. First, a substructure made of Si-contained material is prepared, the surface of which is covered with a native SiO2 film. The substructure is typically a single-crystal Si substrate or a polysilicon film. Next, the native SiO3 film is reduced to be removed from the substructure in a hydrogen atmosphere whose pressure is from 1x10-6 to 1x103 Torr. Then, a refractory metal film is formed on the surface of the substructure without exposing the substructure to the atmospheric pressure. The refractory metal film is in contact with the uncovered surface of the substructure. The refractory metal film is subjected to a heat-treatment process to react with the substructure, so that a refractory metal silicide film of a first phase is formed at the interface of the refractory metal film and the substructure. After the unreacted refractory metal film is removed from the substructure, the substructure is subjected to another heat-treatment process to transform in phase said refractory metal silicide film of said first phase to be that of a second phase lower in resistivity than that of said first phase.
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