SEMICONDUCTOR STORAGE DEVICE, DATA PROCESSING DEVICE

摘要

PURPOSE: To increase the guaranteed number of times of rewriting. CONSTITUTION: The number of times of writing to a memory cell is counted by a counter 113, refresh bias is applied to a memory cell by a memory control circuit 12 based on the counted result. Therefore, by reducing the deterioration of characteristics extracting electrons trapped in a unmatched part of a tunnel oxide film, an undesirably prolonged writing time is shortened, and the guaranteed number of times of rewriting is increased.