| 摘要 |
<p>PURPOSE: To improve the productivity of a thin film transistor, and increase the conductivity of an ion implantation film at a low temperature, by simultaneously performing crystallization and activation of a semiconductor film. CONSTITUTION: On an insulating substrate 1 like glass, an undoped amorphous silicon film, i.e., a-Si film 20 is deposited in an SiH4 -H2 -Ar atmosphere, and then patterned. On the insulating substrate 1 and the a-Si film 20, a gate insulating film 11 is deposited which is formed from TEOS by a plasma CVD method. After an N-type a-Si film 21 is deposited on the gate insulating film 11 above the central part of the a-Si film 20, an aperture 22 reaching the a-Si film 20 is formed in the gate insulating film 11 on the right and left of the N<+> a-Si film 21, by using HF aqueous solution buffered by ammonium fluoride. Phosphorus is ion-implanted in the N<+> a-Si film, and an N<+> implantation film 23 of amorphous crystal structure is formed in regions of a gate, a drain and a source. In order to reduce resistance, heat treatment is performed.</p> |
