| 摘要 |
<p>PURPOSE: To prevent the thickness dispersion of the beam of a semiconductor sensor from influencing its characteristics when the beam is formed by processing a Si substrate. CONSTITUTION: Anisotropical wet etching of a Si substrate 1 from its back side is interrupted to thermally oxidize the entire substrate 1 including the remaining Si thin film 4, so that an oxide film 6 is formed. This film 6 is etched off to realize desired thickness of a beam part 7.</p> |
