| 摘要 |
PURPOSE:To obtain a large output voltage of the semiconductor integrated circuit by a method wherein a Hall element and an amplifier are integrated monolithically on a GaAs substrate. CONSTITUTION:A Hall element part 4 is provided with the Hall element 5, bias terminals 6 and output terminals 7. A negative-feedback amplifier part 8 is provided with a source electrode 9, a gate electrode 10, a feedback resistor 11, a drain electrode 12, drain-source resistors 13 and a drain pad 14. Because the Hall element and the negative-feedback amplifier inserted with the resistor between the drain and the source of a field effect transistor are connected monolithically on the surface of a gallium arsenic substrate, the extremely high output voltage can be obtained. |
