发明名称 |
INTEGRATION OF LOW-K POLYMERS INTO INTERLEVEL DIELECTRICS USING CONTROLLED ELECTRON-BEAM RADIATION |
摘要 |
A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially inbetween metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film (7, 8) is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion (8) of the dielectric layer and a relatively less hardened underlying portion (7) of the dielectric layer.
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申请公布号 |
WO9843294(A1) |
申请公布日期 |
1998.10.01 |
申请号 |
WO1998US04560 |
申请日期 |
1998.03.09 |
申请人 |
ALLIEDSIGNAL INC. |
发明人 |
YANG, JING, JUN;FORESTER, LYNN;CHOI, DONG, KYU;WANG, SHI-QING;HENDRICKS, NEIL, H. |
分类号 |
C08J3/28;G03F7/26;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
C08J3/28 |
代理机构 |
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地址 |
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