发明名称 |
Method of making a insulated gate bipolar transistor with high-energy P+ implant and silicon-etch contact |
摘要 |
An improved insulated gate bipolar transistor (IGBT) device structure and a method for fabricating such a device. This structure uses self-aligned and substantially undiffused successive N+ and P+ implants. The P+ implant is at high energy, which forms a subsurface P+ region below the entire bottom of an N+ "source" region of the IGBT. This low resistivity region suppresses thyristor latch-up when contacted via a surface trench. Self-aligned techniques provide method and product improvements.
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申请公布号 |
US5910668(A) |
申请公布日期 |
1999.06.08 |
申请号 |
US19970909436 |
申请日期 |
1997.06.09 |
申请人 |
DELCO ELECTRONICS CORPORATION |
发明人 |
DISNEY, DONALD RAY |
分类号 |
H01L21/331;H01L29/739;(IPC1-7):H01L29/76;H01L29/74 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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地址 |
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